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RSX301L-30
Diodes
Schottky barrier diode
RSX301L-30
Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.60.2
Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability.
2.0
0.10.02 0.1
5.00.3
5
6
4.50.2
1.20.3
PMDS
1.50.2 2.00.2
Structure Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 Manufacture Date
Taping specifications (Unit : mm)
2.00.05 4.00.1 1.550.05 1.750.1 0.3
5.50.05
1.55 2.90.1 4.00.1 2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature
Limits Symbol VRM 30 VR 30 3 Io 70 IFSM 150 Tj -40 to +150 Tstg (*1)Tc=90max Mounted on epoxy board. 180Half sine wave
5.30.1 0.05 9.50.1
Unit V V A A
Electrical characteristics (Ta=25C) Parameter Symbol
Forward voltage Reverse current
VF I R1 I R2
Min. -
Typ. -
Max. 0.42 90 200
Unit V A A
Conditions IF=3.0A VR=15V VR=30V
120.2
4.2
Rev.D
1/3
RSX301L-30
Diodes
Electrical characteristic curves (Ta=25C)
10 Ta=75 Ta=125 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150 Ta=25 Ta=-25 100000 10000 1000 Ta=25 100 10 1 0 100 200 300 400 500 600 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000000 Ta=150 Ta=125 1000 f=1MHz
Ta=75
0.1
100
0.01
0.001
10 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
400 FORWARD VOLTAGE:VF(mV) Ta=25 IF=3A n=30pcs
1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 AVE:379.8mV 100 0 VF DISPERSION MAP IR DISPERSION MAP AVE:66.90uA Ta=25 VR=30V n=30pcs
850 840 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 830 820 810 800 790 780 770 760 750 Ct DISPERSION MAP AVE:800.8pF Ta=25 f=1MHz VR=0V n=10pcs
390
380
370
360
350
200 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms AVE:178.0A 100 1cyc RESERVE RECOVERY TIME:trr(ns)
30 25 20 15 10 AVE:11.8ns 5 0 IFSM DISPERSION MAP trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc
150
50
0
300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifs t
1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board
IM=100mA IF=1A
3 Rth(j-a)
100
1ms
time
10
Rth(j-c)
FORWARD POWER DISSIPATION:Pf(W)
300us
2
D=1/2
DC
Sin(180) 1
1
0.1 0.001
0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 1 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
Rev.D
2/3
RSX301L-30
Diodes
0A 0V Io t VR D=t/T VR=15V T Tj=150
5
7 6 0A 0V t DC Sin(180) Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=15V T Tj=150
7 6 5 4 3 2 1 0
4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 4 3 2 1 0 0 10 20 30 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D=1/2 REVERSE POWER DISSIPATION:PR (W)
3
DC D=1/2 Sin(180)
2
1
0
25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
150
0
25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
125
150
30 No break at 30kV No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
Rev.D
3/3
Appendix
Notes
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Appendix1-Rev3.0

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